[2071pcs Stock]
- Part Number:
- IDB09E60ATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- DIODE GEN PURP 600V 19.3A TO263.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistors - JFETs and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IDB09E60ATMA1 electronic components. IDB09E60ATMA1 can be shipped within 24 hours after order. If you have any demands for IDB09E60ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDB09E60ATMA1 Product Attributes
Part Number :
IDB09E60ATMA1
Manufacturer :
Infineon Technologies
Description :
DIODE GEN PURP 600V 19.3A TO263
Series :
-
Part Status :
Obsolete
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
600V
Current - Average Rectified (Io) :
19.3A (DC)
Voltage - Forward (Vf) (Max) @ If :
2V @ 9A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
75ns
Current - Reverse Leakage @ Vr :
50µA @ 600V
Capacitance @ Vr, F :
-
Mounting Type :
Surface Mount
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package :
PG-TO263-3
Operating Temperature - Junction :
-55°C ~ 175°C
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