ON Semiconductor - FDPF18N20FT-G

KEY Part #: K6419112

FDPF18N20FT-G Pricing (USD) [91815pcs Stock]

  • 1 pcs$0.42586

Part Number:
FDPF18N20FT-G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N CH 200V 18A TO220F.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Special Purpose, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single, Diodes - Zener - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in ON Semiconductor FDPF18N20FT-G electronic components. FDPF18N20FT-G can be shipped within 24 hours after order. If you have any demands for FDPF18N20FT-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDPF18N20FT-G Product Attributes

Part Number : FDPF18N20FT-G
Manufacturer : ON Semiconductor
Description : MOSFET N CH 200V 18A TO220F
Series : UniFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 140 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 26nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1180pF @ 25V
FET Feature : -
Power Dissipation (Max) : 35W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220F
Package / Case : TO-220-3 Full Pack