HGTG30N60B3D Pricing (USD) [13732pcs Stock]
- 1 pcs$2.91303
- 10 pcs$2.63142
- 100 pcs$2.17860
- 500 pcs$1.89710
- 1,000 pcs$1.65231
- Part Number:
- HGTG30N60B3D
- Manufacturer:
- ON Semiconductor
- Detailed description:
- IGBT 600V 60A 208W TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single, Diodes - RF, Thyristors - SCRs - Modules, Thyristors - TRIACs and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in ON Semiconductor HGTG30N60B3D electronic components. HGTG30N60B3D can be shipped within 24 hours after order. If you have any demands for HGTG30N60B3D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTG30N60B3D Product Attributes
Part Number :
HGTG30N60B3D
Manufacturer :
ON Semiconductor
Description :
IGBT 600V 60A 208W TO247
Series :
-
Part Status :
Not For New Designs
IGBT Type :
-
Voltage - Collector Emitter Breakdown (Max) :
600V
Current - Collector (Ic) (Max) :
60A
Current - Collector Pulsed (Icm) :
220A
Vce(on) (Max) @ Vge, Ic :
1.9V @ 15V, 30A
Power - Max :
208W
Switching Energy :
550µJ (on), 680µJ (off)
Input Type :
Standard
Gate Charge :
170nC
Td (on/off) @ 25°C :
36ns/137ns
Test Condition :
480V, 30A, 3 Ohm, 15V
Reverse Recovery Time (trr) :
55ns
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-247-3
Supplier Device Package :
TO-247
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