[13935pcs Stock]
- Part Number:
- FQE10N20LCTU
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 200V 4A TO-126.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Thyristors - SCRs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQE10N20LCTU electronic components. FQE10N20LCTU can be shipped within 24 hours after order. If you have any demands for FQE10N20LCTU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQE10N20LCTU Product Attributes
Part Number :
FQE10N20LCTU
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 200V 4A TO-126
Series :
QFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
360 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
490pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
12.8W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-126-3
Package / Case :
TO-225AA, TO-126-3
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