NXP USA Inc. - PMN55LN,135

KEY Part #: K6415317

[12451pcs Stock]


    Part Number:
    PMN55LN,135
    Manufacturer:
    NXP USA Inc.
    Detailed description:
    MOSFET N-CH 20V 4.1A 6TSOP.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Single ...
    Competitive Advantage:
    We specialize in NXP USA Inc. PMN55LN,135 electronic components. PMN55LN,135 can be shipped within 24 hours after order. If you have any demands for PMN55LN,135, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PMN55LN,135 Product Attributes

    Part Number : PMN55LN,135
    Manufacturer : NXP USA Inc.
    Description : MOSFET N-CH 20V 4.1A 6TSOP
    Series : TrenchMOS™
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 4.1A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 65 mOhm @ 2.5A, 10V
    Vgs(th) (Max) @ Id : 2V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : 13.1nC @ 10V
    Vgs (Max) : ±15V
    Input Capacitance (Ciss) (Max) @ Vds : 500pF @ 20V
    FET Feature : -
    Power Dissipation (Max) : 1.75W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 6-TSOP
    Package / Case : SC-74, SOT-457