ON Semiconductor - FGA30N120FTDTU

KEY Part #: K6422550

FGA30N120FTDTU Pricing (USD) [13999pcs Stock]

  • 1 pcs$2.94388
  • 10 pcs$2.64332
  • 100 pcs$2.16560
  • 500 pcs$1.84354
  • 1,000 pcs$1.55479

Part Number:
FGA30N120FTDTU
Manufacturer:
ON Semiconductor
Detailed description:
IGBT 1200V 60A 339W TO3P.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Diodes - RF, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in ON Semiconductor FGA30N120FTDTU electronic components. FGA30N120FTDTU can be shipped within 24 hours after order. If you have any demands for FGA30N120FTDTU, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FGA30N120FTDTU Product Attributes

Part Number : FGA30N120FTDTU
Manufacturer : ON Semiconductor
Description : IGBT 1200V 60A 339W TO3P
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 60A
Current - Collector Pulsed (Icm) : 90A
Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 30A
Power - Max : 339W
Switching Energy : -
Input Type : Standard
Gate Charge : 208nC
Td (on/off) @ 25°C : -
Test Condition : -
Reverse Recovery Time (trr) : 730ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3P-3, SC-65-3
Supplier Device Package : TO-3PN