IXFX26N60Q Pricing (USD) [489pcs Stock]
- 1 pcs$6.98509
- Part Number:
- IXFX26N60Q
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 600V 26A PLUS 247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Thyristors - SCRs, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in IXYS IXFX26N60Q electronic components. IXFX26N60Q can be shipped within 24 hours after order. If you have any demands for IXFX26N60Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX26N60Q Product Attributes
Part Number :
IXFX26N60Q
Manufacturer :
IXYS
Description :
MOSFET N-CH 600V 26A PLUS 247
Series :
HiPerFET™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
250 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5100pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
360W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PLUS247™-3
Package / Case :
TO-247-3
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