[8392pcs Stock]
- Part Number:
- SPB02N60C3ATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 650V 1.8A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies SPB02N60C3ATMA1 electronic components. SPB02N60C3ATMA1 can be shipped within 24 hours after order. If you have any demands for SPB02N60C3ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPB02N60C3ATMA1 Product Attributes
Part Number :
SPB02N60C3ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 1.8A D2PAK
Series :
CoolMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3 Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id :
3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs :
12.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
200pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
25W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO263-3-2
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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