DMTH6016LFDFWQ-7R Pricing (USD) [254895pcs Stock]
- 1 pcs$0.14511
- Part Number:
- DMTH6016LFDFWQ-7R
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET BVDSS 41V-60V U-DFN2020-.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMTH6016LFDFWQ-7R electronic components. DMTH6016LFDFWQ-7R can be shipped within 24 hours after order. If you have any demands for DMTH6016LFDFWQ-7R, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH6016LFDFWQ-7R Product Attributes
Part Number :
DMTH6016LFDFWQ-7R
Manufacturer :
Diodes Incorporated
Description :
MOSFET BVDSS 41V-60V U-DFN2020-
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
18 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
15.3nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
925pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
1.06W (Ta)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
U-DFN2020-6
Package / Case :
6-UDFN Exposed Pad
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