Rohm Semiconductor - RFN10TF6S

KEY Part #: K6456495

RFN10TF6S Pricing (USD) [127239pcs Stock]

  • 1 pcs$0.32136
  • 1,000 pcs$0.31976

Part Number:
RFN10TF6S
Manufacturer:
Rohm Semiconductor
Detailed description:
DIODE GEN PURP 600V 10A TO220NFM. Diodes - General Purpose, Power, Switching Diode Switching 600V 10A
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF and Transistors - JFETs ...
Competitive Advantage:
We specialize in Rohm Semiconductor RFN10TF6S electronic components. RFN10TF6S can be shipped within 24 hours after order. If you have any demands for RFN10TF6S, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RFN10TF6S Product Attributes

Part Number : RFN10TF6S
Manufacturer : Rohm Semiconductor
Description : DIODE GEN PURP 600V 10A TO220NFM
Series : -
Part Status : Not For New Designs
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 10A
Voltage - Forward (Vf) (Max) @ If : 1.55V @ 10A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 10µA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220NFM
Operating Temperature - Junction : 150°C (Max)

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