Toshiba Semiconductor and Storage - CMH04(TE12L,Q,M)

KEY Part #: K6438697

CMH04(TE12L,Q,M) Pricing (USD) [755728pcs Stock]

  • 1 pcs$0.05165
  • 3,000 pcs$0.05139

Part Number:
CMH04(TE12L,Q,M)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
DIODE GEN PURP 200V 1A MFLAT. Rectifiers 200V VRRM 1.0A 0.98V VFM 20A REC
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage CMH04(TE12L,Q,M) electronic components. CMH04(TE12L,Q,M) can be shipped within 24 hours after order. If you have any demands for CMH04(TE12L,Q,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CMH04(TE12L,Q,M) Product Attributes

Part Number : CMH04(TE12L,Q,M)
Manufacturer : Toshiba Semiconductor and Storage
Description : DIODE GEN PURP 200V 1A MFLAT
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 980mV @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Current - Reverse Leakage @ Vr : 10µA @ 200V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : SOD-128
Supplier Device Package : M-FLAT (2.4x3.8)
Operating Temperature - Junction : -40°C ~ 150°C

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