[12801pcs Stock]
- Part Number:
- STB11NM60N-1
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V 10A I2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules, Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in STMicroelectronics STB11NM60N-1 electronic components. STB11NM60N-1 can be shipped within 24 hours after order. If you have any demands for STB11NM60N-1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB11NM60N-1 Product Attributes
Part Number :
STB11NM60N-1
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 10A I2PAK
Series :
MDmesh™ II
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
450 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
850pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
90W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I2PAK
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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