[7986pcs Stock]
- Part Number:
- PHX18NQ11T,127
- Manufacturer:
- NXP USA Inc.
- Detailed description:
- MOSFET N-CH 110V 12.5A SOT186A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction, Diodes - RF, Transistors - IGBTs - Modules, Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in NXP USA Inc. PHX18NQ11T,127 electronic components. PHX18NQ11T,127 can be shipped within 24 hours after order. If you have any demands for PHX18NQ11T,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHX18NQ11T,127 Product Attributes
Part Number :
PHX18NQ11T,127
Manufacturer :
NXP USA Inc.
Description :
MOSFET N-CH 110V 12.5A SOT186A
Series :
TrenchMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
110V
Current - Continuous Drain (Id) @ 25°C :
12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
90 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
635pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
31.2W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220F
Package / Case :
TO-220-3 Full Pack, Isolated Tab
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