Microsemi Corporation - JANTXV1N5811US

KEY Part #: K6432875

JANTXV1N5811US Pricing (USD) [6394pcs Stock]

  • 1 pcs$7.73568
  • 108 pcs$7.69719

Part Number:
JANTXV1N5811US
Manufacturer:
Microsemi Corporation
Detailed description:
DIODE GEN PURP 150V 3A B-MELF. ESD Suppressors / TVS Diodes D MET 6A SFST 150V HRV SM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Thyristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - RF ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTXV1N5811US Product Attributes

Part Number : JANTXV1N5811US
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 150V 3A B-MELF
Series : Military, MIL-PRF-19500/477
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 150V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 875mV @ 4A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 5µA @ 150V
Capacitance @ Vr, F : 60pF @ 10V, 1MHz
Mounting Type : Surface Mount
Package / Case : SQ-MELF, B
Supplier Device Package : B, SQ-MELF
Operating Temperature - Junction : -65°C ~ 175°C

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