MMIX1T132N50P3 Pricing (USD) [2472pcs Stock]
- 1 pcs$19.27328
- 10 pcs$18.02098
- 100 pcs$15.62526
- Part Number:
- MMIX1T132N50P3
- Manufacturer:
- IXYS
- Detailed description:
- SMPD HIPERFETS MOSFETS.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - RF, Power Driver Modules and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in IXYS MMIX1T132N50P3 electronic components. MMIX1T132N50P3 can be shipped within 24 hours after order. If you have any demands for MMIX1T132N50P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MMIX1T132N50P3 Product Attributes
Part Number :
MMIX1T132N50P3
Manufacturer :
IXYS
Description :
SMPD HIPERFETS MOSFETS
Series :
Polar™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
43 mOhm @ 66A, 10V
Vgs(th) (Max) @ Id :
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
267nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
18600pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
520W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Polar3™
Package / Case :
24-PowerSMD, 22 Leads
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