SPP18P06PHXKSA1 Pricing (USD) [62765pcs Stock]
- 1 pcs$0.62297
- Part Number:
- SPP18P06PHXKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET P-CH 60V 18.7A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules, Thyristors - SCRs, Transistors - Special Purpose, Diodes - RF and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies SPP18P06PHXKSA1 electronic components. SPP18P06PHXKSA1 can be shipped within 24 hours after order. If you have any demands for SPP18P06PHXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPP18P06PHXKSA1 Product Attributes
Part Number :
SPP18P06PHXKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH 60V 18.7A TO-220
Series :
SIPMOS®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
130 mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
860pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
81.1W (Ta)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO220-3
Package / Case :
TO-220-3
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