STP27N60M2-EP Pricing (USD) [15205pcs Stock]
- 1 pcs$2.55165
- 10 pcs$2.27842
- 100 pcs$1.86830
- 500 pcs$1.51287
- 1,000 pcs$1.27591
- Part Number:
- STP27N60M2-EP
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V 20A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in STMicroelectronics STP27N60M2-EP electronic components. STP27N60M2-EP can be shipped within 24 hours after order. If you have any demands for STP27N60M2-EP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STP27N60M2-EP Product Attributes
Part Number :
STP27N60M2-EP
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 20A TO-220
Series :
MDmesh™ M2-EP
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
163 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
1320pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
170W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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