Part Number :
TK31J60W,S1VQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N CH 600V 30.8A TO-3PN
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
88 mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id :
3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 300V
FET Feature :
Super Junction
Power Dissipation (Max) :
230W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3P(N)
Package / Case :
TO-3P-3, SC-65-3