Toshiba Semiconductor and Storage - TK31J60W,S1VQ

KEY Part #: K6394517

TK31J60W,S1VQ Pricing (USD) [11067pcs Stock]

  • 1 pcs$4.09851
  • 25 pcs$3.35902
  • 100 pcs$3.03127
  • 500 pcs$2.53971

Part Number:
TK31J60W,S1VQ
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N CH 600V 30.8A TO-3PN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK31J60W,S1VQ electronic components. TK31J60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK31J60W,S1VQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK31J60W,S1VQ Product Attributes

Part Number : TK31J60W,S1VQ
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N CH 600V 30.8A TO-3PN
Series : DTMOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 88 mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id : 3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 86nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3000pF @ 300V
FET Feature : Super Junction
Power Dissipation (Max) : 230W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(N)
Package / Case : TO-3P-3, SC-65-3