Taiwan Semiconductor Corporation - LL5817 L0G

KEY Part #: K6434747

LL5817 L0G Pricing (USD) [593446pcs Stock]

  • 1 pcs$0.06233

Part Number:
LL5817 L0G
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
DIODE SCHOTTKY 20V 1A MELF. Schottky Diodes & Rectifiers 1A, 20V, MELF SCHOTTKY RECTIFIER
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation LL5817 L0G electronic components. LL5817 L0G can be shipped within 24 hours after order. If you have any demands for LL5817 L0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

LL5817 L0G Product Attributes

Part Number : LL5817 L0G
Manufacturer : Taiwan Semiconductor Corporation
Description : DIODE SCHOTTKY 20V 1A MELF
Series : -
Part Status : Active
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 20V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 750mV @ 3A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 500µA @ 20V
Capacitance @ Vr, F : 110pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-213AB, MELF
Supplier Device Package : MELF
Operating Temperature - Junction : -65°C ~ 125°C

You May Also Be Interested In
  • MBRD5100HL-TP

    Micro Commercial Co

    5A100VSCHOTTKYDPAK PACKAGE. Schottky Diodes & Rectifiers 5A SCHOTTKY RECTIFIER

  • BAS70WT-TP

    Micro Commercial Co

    DIODE SCHOTTKY 70V 70MA SOT323.

  • VS-8EWS16S-M3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1.6KV 8A TO252. Schottky Diodes & Rectifiers New Input Diodes - D-PAK-e3

  • VS-10ETS10STRR-M3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1KV 10A D2PAK. Rectifiers New Input Diodes - D2PAK-e3

  • BYD33GGPHE3/54

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1A DO204AL.

  • CRH01(TE85R,Q,M)

    Toshiba Semiconductor and Storage

    DIODE GEN PURP 200V 1A SFLAT. Rectifiers Diode Hi Efficiency 200V 1A