Vishay Semiconductor Diodes Division - BYG23T-M3/TR

KEY Part #: K6457002

BYG23T-M3/TR Pricing (USD) [519967pcs Stock]

  • 1 pcs$0.07113
  • 1,800 pcs$0.06623
  • 3,600 pcs$0.06071
  • 5,400 pcs$0.05703
  • 12,600 pcs$0.05335

Part Number:
BYG23T-M3/TR
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE AVALANCHE 1300V 1A DO214AC. Rectifiers 1A 1300V High Volt Ultrafast
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BYG23T-M3/TR electronic components. BYG23T-M3/TR can be shipped within 24 hours after order. If you have any demands for BYG23T-M3/TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG23T-M3/TR Product Attributes

Part Number : BYG23T-M3/TR
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE AVALANCHE 1300V 1A DO214AC
Series : -
Part Status : Active
Diode Type : Avalanche
Voltage - DC Reverse (Vr) (Max) : 1300V
Current - Average Rectified (Io) : 1A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.9V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Current - Reverse Leakage @ Vr : 5µA @ 1300V
Capacitance @ Vr, F : 9pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AC, SMA
Supplier Device Package : DO-214AC (SMA)
Operating Temperature - Junction : -55°C ~ 150°C

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