BYM11-1000HE3_A/H Pricing (USD) [777077pcs Stock]
- 1 pcs$0.04760
- Part Number:
- BYM11-1000HE3_A/H
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- DIODE GEN PURP 1KV 1A DO213AB. Rectifiers 1A,1000V,500NS GL41 AEC-Q101 Qualified
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays, Transistors - Special Purpose and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division BYM11-1000HE3_A/H electronic components. BYM11-1000HE3_A/H can be shipped within 24 hours after order. If you have any demands for BYM11-1000HE3_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BYM11-1000HE3_A/H Product Attributes
Part Number :
BYM11-1000HE3_A/H
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 1KV 1A DO213AB
Series :
Automotive, AEC-Q101, Superectifier®
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
1000V
Current - Average Rectified (Io) :
1A
Voltage - Forward (Vf) (Max) @ If :
1.3V @ 1A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
500ns
Current - Reverse Leakage @ Vr :
5µA @ 1000V
Capacitance @ Vr, F :
15pF @ 4V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
DO-213AB, MELF (Glass)
Supplier Device Package :
DO-213AB
Operating Temperature - Junction :
-65°C ~ 175°C
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