ON Semiconductor - NVMFD5873NLT1G

KEY Part #: K6525142

NVMFD5873NLT1G Pricing (USD) [85671pcs Stock]

  • 1 pcs$0.45641
  • 1,500 pcs$0.41493

Part Number:
NVMFD5873NLT1G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET 2N-CH 60V 10A SO8FL.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Transistors - JFETs, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in ON Semiconductor NVMFD5873NLT1G electronic components. NVMFD5873NLT1G can be shipped within 24 hours after order. If you have any demands for NVMFD5873NLT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFD5873NLT1G Product Attributes

Part Number : NVMFD5873NLT1G
Manufacturer : ON Semiconductor
Description : MOSFET 2N-CH 60V 10A SO8FL
Series : -
Part Status : Not For New Designs
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 10A
Rds On (Max) @ Id, Vgs : 13 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1560pF @ 25V
Power - Max : 3.1W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerTDFN
Supplier Device Package : 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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