IXFH80N65X2-4 Pricing (USD) [9197pcs Stock]
- 1 pcs$4.48104
- Part Number:
- IXFH80N65X2-4
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Transistors - Special Purpose, Diodes - Zener - Single and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in IXYS IXFH80N65X2-4 electronic components. IXFH80N65X2-4 can be shipped within 24 hours after order. If you have any demands for IXFH80N65X2-4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH80N65X2-4 Product Attributes
Part Number :
IXFH80N65X2-4
Manufacturer :
IXYS
Description :
MOSFET N-CH
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
38 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id :
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
8300pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
890W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247-4L
Package / Case :
TO-247-4
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