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  5. MBR600200CT

GeneSiC Semiconductor - MBR600200CT

KEY Part #: K6468492

MBR600200CT Pricing (USD) [729pcs Stock]

  • 1 pcs$63.61256
  • 25 pcs$37.09736
Part Number:
MBR600200CT
Manufacturer:
GeneSiC Semiconductor
Detailed description:
DIODE SCHOTTKY 200V 300A 2 TOWER. Schottky Diodes & Rectifiers 150V 600A Forward
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor MBR600200CT electronic components. MBR600200CT can be shipped within 24 hours after order. If you have any demands for MBR600200CT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MBR600200CT Product Attributes

Part Number : MBR600200CT
Manufacturer : GeneSiC Semiconductor
Description : DIODE SCHOTTKY 200V 300A 2 TOWER
Series : -
Part Status : Active
Diode Configuration : 1 Pair Common Cathode
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) (per Diode) : 300A
Voltage - Forward (Vf) (Max) @ If : 920mV @ 300A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 3mA @ 200V
Operating Temperature - Junction : -55°C ~ 150°C
Mounting Type : Chassis Mount
Package / Case : Twin Tower
Supplier Device Package : Twin Tower
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