RN1102MFV,L3F Pricing (USD) [2474111pcs Stock]
- 1 pcs$0.01502
- 8,000 pcs$0.01495
- 16,000 pcs$0.01271
- 24,000 pcs$0.01196
- 56,000 pcs$0.01121
- Part Number:
- RN1102MFV,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- TRANS PREBIAS NPN 50V 0.15W VESM.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage RN1102MFV,L3F electronic components. RN1102MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1102MFV,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1102MFV,L3F Product Attributes
Part Number :
RN1102MFV,L3F
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS PREBIAS NPN 50V 0.15W VESM
Series :
-
Part Status :
Active
Transistor Type :
NPN - Pre-Biased
Current - Collector (Ic) (Max) :
100mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Resistor - Base (R1) :
10 kOhms
Resistor - Emitter Base (R2) :
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) :
500nA
Frequency - Transition :
-
Power - Max :
150mW
Mounting Type :
Surface Mount
Package / Case :
SOT-723
Supplier Device Package :
VESM
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