Diodes Incorporated - DMP56D0UFB-7

KEY Part #: K6393638

DMP56D0UFB-7 Pricing (USD) [727113pcs Stock]

  • 1 pcs$0.05087
  • 3,000 pcs$0.04620

Part Number:
DMP56D0UFB-7
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET P-CH 50V 200MA 3DFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Diodes - Bridge Rectifiers and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in Diodes Incorporated DMP56D0UFB-7 electronic components. DMP56D0UFB-7 can be shipped within 24 hours after order. If you have any demands for DMP56D0UFB-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMP56D0UFB-7 Product Attributes

Part Number : DMP56D0UFB-7
Manufacturer : Diodes Incorporated
Description : MOSFET P-CH 50V 200MA 3DFN
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 6 Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id : 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.58nC @ 4V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 50.54pF @ 25V
FET Feature : -
Power Dissipation (Max) : 425mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 3-DFN1006 (1.0x0.6)
Package / Case : 3-UFDFN