Infineon Technologies - IPP80N06S4L07AKSA2

KEY Part #: K6419078

IPP80N06S4L07AKSA2 Pricing (USD) [90341pcs Stock]

  • 1 pcs$0.43281
  • 500 pcs$0.39707

Part Number:
IPP80N06S4L07AKSA2
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 60V 80A TO220-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs and Diodes - Variable Capacitance (Varicaps, Varactors) ...
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We specialize in Infineon Technologies IPP80N06S4L07AKSA2 electronic components. IPP80N06S4L07AKSA2 can be shipped within 24 hours after order. If you have any demands for IPP80N06S4L07AKSA2, Please submit a Request for Quotation here or send us an email:
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IPP80N06S4L07AKSA2 Product Attributes

Part Number : IPP80N06S4L07AKSA2
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 60V 80A TO220-3
Series : Automotive, AEC-Q101, OptiMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.7 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs : 75nC @ 10V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 5680pF @ 25V
FET Feature : -
Power Dissipation (Max) : 79W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO220-3-1
Package / Case : TO-220-3