Infineon Technologies - IRFS4310ZPBF

KEY Part #: K6413146

IRFS4310ZPBF Pricing (USD) [13201pcs Stock]

  • 1 pcs$1.37498
  • 10 pcs$1.22603
  • 100 pcs$0.95394
  • 500 pcs$0.77246
  • 1,000 pcs$0.65147

Part Number:
IRFS4310ZPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 100V 120A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IRFS4310ZPBF electronic components. IRFS4310ZPBF can be shipped within 24 hours after order. If you have any demands for IRFS4310ZPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFS4310ZPBF Product Attributes

Part Number : IRFS4310ZPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 100V 120A D2PAK
Series : HEXFET®
Part Status : Discontinued at Digi-Key
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id : 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 170nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6860pF @ 50V
FET Feature : -
Power Dissipation (Max) : 250W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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