STH130N8F7-2 Pricing (USD) [83162pcs Stock]
- 1 pcs$0.47017
- 1,000 pcs$0.42013
- Part Number:
- STH130N8F7-2
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 80V 110A H2PAK-2.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in STMicroelectronics STH130N8F7-2 electronic components. STH130N8F7-2 can be shipped within 24 hours after order. If you have any demands for STH130N8F7-2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STH130N8F7-2 Product Attributes
Part Number :
STH130N8F7-2
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 80V 110A H2PAK-2
Series :
STripFET™ F7
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
5 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
205W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
H2Pak-2
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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