[3271pcs Stock]
- Part Number:
- IRD3CH11DB6
- Manufacturer:
- Infineon Technologies
- Detailed description:
- DIODE GEN PURP 1.2KV 25A DIE.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Transistors - Special Purpose, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single, Transistors - IGBTs - Modules and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRD3CH11DB6 electronic components. IRD3CH11DB6 can be shipped within 24 hours after order. If you have any demands for IRD3CH11DB6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRD3CH11DB6 Product Attributes
Part Number :
IRD3CH11DB6
Manufacturer :
Infineon Technologies
Description :
DIODE GEN PURP 1.2KV 25A DIE
Series :
-
Part Status :
Obsolete
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
1200V
Current - Average Rectified (Io) :
25A
Voltage - Forward (Vf) (Max) @ If :
2.7V @ 25A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
190ns
Current - Reverse Leakage @ Vr :
700nA @ 1200V
Capacitance @ Vr, F :
-
Mounting Type :
Surface Mount
Package / Case :
Die
Supplier Device Package :
Die
Operating Temperature - Junction :
-40°C ~ 150°C
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