Infineon Technologies - IPP120N10S405AKSA1

KEY Part #: K6418026

IPP120N10S405AKSA1 Pricing (USD) [49421pcs Stock]

  • 1 pcs$0.85021
  • 500 pcs$0.84598

Part Number:
IPP120N10S405AKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH TO220-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in Infineon Technologies IPP120N10S405AKSA1 electronic components. IPP120N10S405AKSA1 can be shipped within 24 hours after order. If you have any demands for IPP120N10S405AKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP120N10S405AKSA1 Product Attributes

Part Number : IPP120N10S405AKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH TO220-3
Series : Automotive, AEC-Q101, OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 120µA
Gate Charge (Qg) (Max) @ Vgs : 91nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6540pF @ 25V
FET Feature : -
Power Dissipation (Max) : 190W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO220-3-1
Package / Case : TO-220-3

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