Vishay Semiconductor Diodes Division - GI756-E3/54

KEY Part #: K6452992

GI756-E3/54 Pricing (USD) [235208pcs Stock]

  • 1 pcs$0.15725
  • 800 pcs$0.14809
  • 1,600 pcs$0.11847
  • 2,400 pcs$0.10736
  • 5,600 pcs$0.09996
  • 20,000 pcs$0.09872

Part Number:
GI756-E3/54
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 6A P600. Rectifiers 6.0 Amp 600 Volt
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Diodes - Rectifiers - Arrays, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division GI756-E3/54 electronic components. GI756-E3/54 can be shipped within 24 hours after order. If you have any demands for GI756-E3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GI756-E3/54 Product Attributes

Part Number : GI756-E3/54
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 6A P600
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 6A
Voltage - Forward (Vf) (Max) @ If : 900mV @ 6A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 2.5µs
Current - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 150pF @ 4V, 1MHz
Mounting Type : Through Hole
Package / Case : P600, Axial
Supplier Device Package : P600
Operating Temperature - Junction : -50°C ~ 150°C

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