Taiwan Semiconductor Corporation - TSM130NB06CR RLG

KEY Part #: K6403619

TSM130NB06CR RLG Pricing (USD) [267739pcs Stock]

  • 1 pcs$0.13815

Part Number:
TSM130NB06CR RLG
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
MOSFET SINGLE N-CHANNEL TRENCH.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Diodes - Rectifiers - Single, Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays and Transistors - JFETs ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation TSM130NB06CR RLG electronic components. TSM130NB06CR RLG can be shipped within 24 hours after order. If you have any demands for TSM130NB06CR RLG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM130NB06CR RLG Product Attributes

Part Number : TSM130NB06CR RLG
Manufacturer : Taiwan Semiconductor Corporation
Description : MOSFET SINGLE N-CHANNEL TRENCH
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 13 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2380pF @ 30V
FET Feature : -
Power Dissipation (Max) : 3.1W (Ta), 83W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-PDFN (5x6)
Package / Case : 8-PowerTDFN