SISS30DN-T1-GE3 Pricing (USD) [172802pcs Stock]
- 1 pcs$0.21404
- Part Number:
- SISS30DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CHAN 80-V POWERPAK 1212.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Diodes - Rectifiers - Single, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SISS30DN-T1-GE3 electronic components. SISS30DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS30DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS30DN-T1-GE3 Product Attributes
Part Number :
SISS30DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CHAN 80-V POWERPAK 1212
Series :
TrenchFET® Gen IV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
15.9A (Ta), 54.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
8.25 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1666pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
4.8W (Ta), 57W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® 1212-8S
Package / Case :
PowerPAK® 1212-8S
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