STI20N60M2-EP Pricing (USD) [72767pcs Stock]
- 1 pcs$0.53734
- 1,000 pcs$0.48015
- Part Number:
- STI20N60M2-EP
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CHANNEL 600V 13A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in STMicroelectronics STI20N60M2-EP electronic components. STI20N60M2-EP can be shipped within 24 hours after order. If you have any demands for STI20N60M2-EP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STI20N60M2-EP Product Attributes
Part Number :
STI20N60M2-EP
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CHANNEL 600V 13A TO220
Series :
MDmesh™ M2-EP
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
278 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id :
4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
21.7nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
787pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
110W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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