RGTH00TS65DGC11 Pricing (USD) [18373pcs Stock]
- 1 pcs$2.24316
- 10 pcs$2.00122
- 25 pcs$1.80123
- 100 pcs$1.64108
- 250 pcs$1.48098
- 500 pcs$1.32889
- 1,000 pcs$1.06327
- Part Number:
- RGTH00TS65DGC11
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- IGBT 650V 85A 277W TO-247N.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - JFETs, Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RGTH00TS65DGC11 electronic components. RGTH00TS65DGC11 can be shipped within 24 hours after order. If you have any demands for RGTH00TS65DGC11, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RGTH00TS65DGC11 Product Attributes
Part Number :
RGTH00TS65DGC11
Manufacturer :
Rohm Semiconductor
Description :
IGBT 650V 85A 277W TO-247N
Series :
-
Part Status :
Active
IGBT Type :
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) :
650V
Current - Collector (Ic) (Max) :
85A
Current - Collector Pulsed (Icm) :
200A
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 50A
Power - Max :
277W
Switching Energy :
-
Input Type :
Standard
Gate Charge :
94nC
Td (on/off) @ 25°C :
39ns/143ns
Test Condition :
400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr) :
54ns
Operating Temperature :
-40°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-247-3
Supplier Device Package :
TO-247N
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