Microsemi Corporation - JANTXV1N5551US

KEY Part #: K6432904

JANTXV1N5551US Pricing (USD) [4446pcs Stock]

  • 1 pcs$9.74311
  • 100 pcs$8.98621

Part Number:
JANTXV1N5551US
Manufacturer:
Microsemi Corporation
Detailed description:
DIODE GEN PURP 400V 3A B-MELF. ESD Suppressors / TVS Diodes D MET 3A STD 400V HRV
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Microsemi Corporation JANTXV1N5551US electronic components. JANTXV1N5551US can be shipped within 24 hours after order. If you have any demands for JANTXV1N5551US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTXV1N5551US Product Attributes

Part Number : JANTXV1N5551US
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 400V 3A B-MELF
Series : Military, MIL-PRF-19500/420
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 400V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 1.2V @ 9A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 2µs
Current - Reverse Leakage @ Vr : 1µA @ 400V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : SQ-MELF, B
Supplier Device Package : D-5B
Operating Temperature - Junction : -65°C ~ 175°C

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