Vishay Semiconductor Diodes Division - RGL41JHE3/96

KEY Part #: K6439355

RGL41JHE3/96 Pricing (USD) [715706pcs Stock]

  • 1 pcs$0.05453
  • 6,000 pcs$0.05426

Part Number:
RGL41JHE3/96
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 1A DO213AB. Rectifiers 1 Amp 600 Volt 250ns
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division RGL41JHE3/96 electronic components. RGL41JHE3/96 can be shipped within 24 hours after order. If you have any demands for RGL41JHE3/96, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGL41JHE3/96 Product Attributes

Part Number : RGL41JHE3/96
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 1A DO213AB
Series : SUPERECTIFIER®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 250ns
Current - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 15pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-213AB, MELF (Glass)
Supplier Device Package : DO-213AB
Operating Temperature - Junction : -65°C ~ 175°C

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