Vishay Siliconix - SI1016X-T1-GE3

KEY Part #: K6525079

SI1016X-T1-GE3 Pricing (USD) [518123pcs Stock]

  • 1 pcs$0.07139
  • 3,000 pcs$0.06743

Part Number:
SI1016X-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N/P-CH 20V SC89-6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix SI1016X-T1-GE3 electronic components. SI1016X-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1016X-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1016X-T1-GE3 Product Attributes

Part Number : SI1016X-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N/P-CH 20V SC89-6
Series : TrenchFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 485mA, 370mA
Rds On (Max) @ Id, Vgs : 700 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 250mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : SC-89-6

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