Diodes Incorporated - ZXM62N03E6TA

KEY Part #: K6414997

[12562pcs Stock]


    Part Number:
    ZXM62N03E6TA
    Manufacturer:
    Diodes Incorporated
    Detailed description:
    MOSFET N-CH 30V 3.2A SOT-23-6.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules, Diodes - Rectifiers - Arrays, Thyristors - SCRs, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolar (BJT) - RF ...
    Competitive Advantage:
    We specialize in Diodes Incorporated ZXM62N03E6TA electronic components. ZXM62N03E6TA can be shipped within 24 hours after order. If you have any demands for ZXM62N03E6TA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ZXM62N03E6TA Product Attributes

    Part Number : ZXM62N03E6TA
    Manufacturer : Diodes Incorporated
    Description : MOSFET N-CH 30V 3.2A SOT-23-6
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 3.2A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 110 mOhm @ 2.2A, 10V
    Vgs(th) (Max) @ Id : 1V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 9.6nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 1.1W (Ta)
    Operating Temperature : -
    Mounting Type : Surface Mount
    Supplier Device Package : SOT-23-6
    Package / Case : SOT-23-6