FDB0165N807L Pricing (USD) [25331pcs Stock]
- 1 pcs$1.62695
- 800 pcs$1.56986
- Part Number:
- FDB0165N807L
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 80V 310A TO263.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDB0165N807L electronic components. FDB0165N807L can be shipped within 24 hours after order. If you have any demands for FDB0165N807L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDB0165N807L Product Attributes
Part Number :
FDB0165N807L
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 80V 310A TO263
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
310A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.6 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
304nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
23660pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
3.8W (Ta), 300W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK (TO-263)
Package / Case :
TO-263-7, D²Pak (6 Leads + Tab)
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