IXYS - IXTA3N110

KEY Part #: K6393661

IXTA3N110 Pricing (USD) [18390pcs Stock]

  • 1 pcs$2.59001
  • 50 pcs$2.57713

Part Number:
IXTA3N110
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 1100V 3A TO-263.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Arrays, Thyristors - SCRs, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Single, Power Driver Modules and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in IXYS IXTA3N110 electronic components. IXTA3N110 can be shipped within 24 hours after order. If you have any demands for IXTA3N110, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTA3N110 Product Attributes

Part Number : IXTA3N110
Manufacturer : IXYS
Description : MOSFET N-CH 1100V 3A TO-263
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1100V
Current - Continuous Drain (Id) @ 25°C : 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 25V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263 (IXTA)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB