Description :
MOSFET N-CH 1100V 3A TO-263
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1100V
Current - Continuous Drain (Id) @ 25°C :
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 25V
Power Dissipation (Max) :
150W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-263 (IXTA)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB