Infineon Technologies - IRF6644TR1

KEY Part #: K6412896

[13286pcs Stock]


    Part Number:
    IRF6644TR1
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET N-CH 100V DIRECTFET-MN.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - Special Purpose, Diodes - Rectifiers - Single, Thyristors - DIACs, SIDACs and Diodes - RF ...
    Competitive Advantage:
    We specialize in Infineon Technologies IRF6644TR1 electronic components. IRF6644TR1 can be shipped within 24 hours after order. If you have any demands for IRF6644TR1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF6644TR1 Product Attributes

    Part Number : IRF6644TR1
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 100V DIRECTFET-MN
    Series : HEXFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 10.3A (Ta), 60A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 13 mOhm @ 10.3A, 10V
    Vgs(th) (Max) @ Id : 4.8V @ 150µA
    Gate Charge (Qg) (Max) @ Vgs : 47nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 2210pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 2.8W (Ta), 89W (Tc)
    Operating Temperature : -40°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : DIRECTFET™ MN
    Package / Case : DirectFET™ Isometric MN