PHK18NQ03LT,518 Pricing (USD) [12487pcs Stock]
- 10,000 pcs$0.15436
- Part Number:
- PHK18NQ03LT,518
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 30V 20.3A 8-SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Single, Diodes - Rectifiers - Arrays, Transistors - JFETs and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PHK18NQ03LT,518 electronic components. PHK18NQ03LT,518 can be shipped within 24 hours after order. If you have any demands for PHK18NQ03LT,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHK18NQ03LT,518 Product Attributes
Part Number :
PHK18NQ03LT,518
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 30V 20.3A 8-SOIC
Series :
TrenchMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
8.9 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
10.6nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1380pF @ 12V
FET Feature :
-
Power Dissipation (Max) :
6.25W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SO
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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