[12490pcs Stock]
- Part Number:
- BSH205,215
- Manufacturer:
- NXP USA Inc.
- Detailed description:
- MOSFET P-CH 12V 0.75A SOT-23.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs, Transistors - Bipolar (BJT) - RF and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in NXP USA Inc. BSH205,215 electronic components. BSH205,215 can be shipped within 24 hours after order. If you have any demands for BSH205,215, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSH205,215 Product Attributes
Part Number :
BSH205,215
Manufacturer :
NXP USA Inc.
Description :
MOSFET P-CH 12V 0.75A SOT-23
Series :
-
Part Status :
Obsolete
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
400 mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id :
680mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
3.8nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
200pF @ 9.6V
FET Feature :
-
Power Dissipation (Max) :
417mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-236AB (SOT23)
Package / Case :
TO-236-3, SC-59, SOT-23-3
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