Vishay Siliconix - SQS462EN-T1_GE3

KEY Part #: K6420383

SQS462EN-T1_GE3 Pricing (USD) [190084pcs Stock]

  • 1 pcs$0.19459
  • 3,000 pcs$0.16445

Part Number:
SQS462EN-T1_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 60V 8A 1212-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQS462EN-T1_GE3 Product Attributes

Part Number : SQS462EN-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 60V 8A 1212-8
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 63 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 470pF @ 25V
FET Feature : -
Power Dissipation (Max) : 33W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® 1212-8
Package / Case : PowerPAK® 1212-8

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