IPT60R080G7XTMA1 Pricing (USD) [25134pcs Stock]
- 1 pcs$1.66648
- 2,000 pcs$1.65819
- Part Number:
- IPT60R080G7XTMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 650V 29A HSOF-8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPT60R080G7XTMA1 electronic components. IPT60R080G7XTMA1 can be shipped within 24 hours after order. If you have any demands for IPT60R080G7XTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPT60R080G7XTMA1 Product Attributes
Part Number :
IPT60R080G7XTMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 29A HSOF-8
Series :
CoolMOS™ G7
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
80 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id :
4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1640pF @ 400V
FET Feature :
-
Power Dissipation (Max) :
167W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-HSOF-8-2
Package / Case :
8-PowerSFN
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