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Microsemi Corporation - APT25GP90BDQ1G

KEY Part #: K6423432

APT25GP90BDQ1G Pricing (USD) [9614pcs Stock]

  • 1 pcs$4.28639
  • 57 pcs$4.28639
Part Number:
APT25GP90BDQ1G
Manufacturer:
Microsemi Corporation
Detailed description:
IGBT 900V 72A 417W TO247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Diodes - RF, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in Microsemi Corporation APT25GP90BDQ1G electronic components. APT25GP90BDQ1G can be shipped within 24 hours after order. If you have any demands for APT25GP90BDQ1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT25GP90BDQ1G Product Attributes

Part Number : APT25GP90BDQ1G
Manufacturer : Microsemi Corporation
Description : IGBT 900V 72A 417W TO247
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 72A
Current - Collector Pulsed (Icm) : 110A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 25A
Power - Max : 417W
Switching Energy : 370µJ (off)
Input Type : Standard
Gate Charge : 110nC
Td (on/off) @ 25°C : 13ns/55ns
Test Condition : 600V, 40A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]

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