[13934pcs Stock]
- Part Number:
- FQNL2N50BBU
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 500V 0.35A TO-92L.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQNL2N50BBU electronic components. FQNL2N50BBU can be shipped within 24 hours after order. If you have any demands for FQNL2N50BBU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQNL2N50BBU Product Attributes
Part Number :
FQNL2N50BBU
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 500V 0.35A TO-92L
Series :
QFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
350mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
5.3 Ohm @ 175mA, 10V
Vgs(th) (Max) @ Id :
3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
230pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1.5W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-92-3
Package / Case :
TO-226-3, TO-92-3 Long Body (Formed Leads)
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