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GeneSiC Semiconductor - MURTA20060R

KEY Part #: K6468682

MURTA20060R Pricing (USD) [893pcs Stock]

  • 1 pcs$52.02314
  • 18 pcs$36.55488
Part Number:
MURTA20060R
Manufacturer:
GeneSiC Semiconductor
Detailed description:
DIODE GEN PURP 600V 100A 3 TOWER. Rectifiers 600V 200A Si Super Fast Recovery
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor MURTA20060R electronic components. MURTA20060R can be shipped within 24 hours after order. If you have any demands for MURTA20060R, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MURTA20060R Product Attributes

Part Number : MURTA20060R
Manufacturer : GeneSiC Semiconductor
Description : DIODE GEN PURP 600V 100A 3 TOWER
Series : -
Part Status : Active
Diode Configuration : 1 Pair Common Anode
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) (per Diode) : 100A
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 100A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 25µA @ 600V
Operating Temperature - Junction : -55°C ~ 150°C
Mounting Type : Chassis Mount
Package / Case : Three Tower
Supplier Device Package : Three Tower
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